Solutio pro Standardis Transformatoribus Voltai de Alta Praecisione in Laboratorio

Ⅰ. Technical Focus: Traceability to Metrological Standards
Hoc opus in nationali systemate metrologico electricitatis fundamentatur, per catenam tracabilitatis independentem controlatam ut efficiat ut mensurae tensionis directe referantur ad Systema Internationale Unitatum (SI). Per eliminationem errorum concatenatorum in instrumentis mensuralibus tradicionalibus, praebet capacitatem mensurae tensionis gradus reference pro laboratoriis superioribus.

Ⅱ. Core Technical Innovations
Dual-Stage Voltage Transformer Error Compensation Structure
• Utilizat designum dualiter clausum cum primario et spira compensationis, quae effectus currentis excitationis et reactantiae leakage dynamice compensat per cancellationem fluxus magneticus real-time inversi. Hoc superat limites theoreticos accuratiae transformatorum unius stadii.
• Accuratia spira compensationis: ±0.5 ppm, permittens correctionem automaticam erroris nonlineari in latissimo ambitu (1%–120% Un).

• Thermostatic Oil-Immersion Temperature Control System
  • Impletur oleo insulante ester synthetico altissimae stabilitatis (coefficientem expansionis thermicae <100 ppm/°C).
  • Tres stagii controlis temperaturem semiconductore:
  • Praecisio temperaturae olei: 55±0.05°C (superans requirementum ±0.1°C)
  • Gradientem temperaturae: <0.3°C variatio axialis inter spiras
  • Constantem temporalem thermicam >8 horas; drift diurnus <0.01°C.
•  Ultra-Low TCR Quartz-Substrate Voltage Divider Resistors
  • Elementa resistiva in substrato quartz fusi (CTE=0.55 ppm/°C).
  • Resistoria metallica filmis tenuis laser-trimmed (NiCrAl alloy):
  • Coefficientem temperaturae (TCR): <0.05 ppm/°C (media testata)
  • Coefficientem tensionis (VCR): <0.02 ppm/V
  • Rationem senectutis annuae: <3 ppm

Ⅲ. Application Scenarios
• Standardes tensionis institutorum metrologicorum nationalium
• Monitoria potentiae pro apparatu fabricandi chips (ex. 0.1nm-resolution etchers)
• Certificatio precisionis supply power confinementis magneticae in dispositivis fusionis
• Mensurationes reference resistentiae pro materialibus semiconductor novis