A cikin littattin, an yi amfani da hanyar kara (BW) na transformer don inganta BW, gajeruwa, da kuma tashar silicon na amplifiers na transimpedance (TIAs) na inverter, wanda suke amfani da inductive peaking. TIA na hanyar da aka bayar, wanda ake gina da kuma fadada a 16-nm FinFET process, ya nuna 36% na yawan BW, 19% na kusan gajeruwar input-referred, da 57% na kusan tashar silicon daga TIA na tsakanin da inductive peaking. A cikin na hanyar TIA, ta shirya transformer a zaninka mafi girma ya taimaka waɗannan parasitic capacitances na inverter da kuma ya sauransu limitin transimpedance na TIA na tsakanin. Hanyar da aka bayar ya haɗa ƙarin gajeruwar current noise spectrum na TIA. An yi post-layout tare da electromagnetic (EM) simulations da kuma statistical analysis don tabbatar da darajar da hanyar da aka bayar ya ɗauki. Tunanen abubuwa sun nuna cewa TIA ta sami transimpedance gain na 58 dB
Source: IEEE Xplore
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