• Product
  • Suppliers
  • Manufacturers
  • Solutions
  • Free tools
  • Knowledges
  • Experts
  • Communities
Search


Amfani da Aiki na Inbari na Furfuri na Inganci na Jirgin Tashin Karamin Mutum Da Iya Samun Kirkiro Tsawon Sali Na Furfuri

IEEE Xplore
IEEE Xplore
فیلڈ: Tsunukan da Dukia
0
Canada

A cikin littattin, an yi amfani da hanyar kara (BW) na transformer don inganta BW, gajeruwa, da kuma tashar silicon na amplifiers na transimpedance (TIAs) na inverter, wanda suke amfani da inductive peaking. TIA na hanyar da aka bayar, wanda ake gina da kuma fadada a 16-nm FinFET process, ya nuna 36% na yawan BW, 19% na kusan gajeruwar input-referred, da 57% na kusan tashar silicon daga TIA na tsakanin da inductive peaking. A cikin na hanyar TIA, ta shirya transformer a zaninka mafi girma ya taimaka waɗannan parasitic capacitances na inverter da kuma ya sauransu limitin transimpedance na TIA na tsakanin. Hanyar da aka bayar ya haɗa ƙarin gajeruwar current noise spectrum na TIA. An yi post-layout tare da electromagnetic (EM) simulations da kuma statistical analysis don tabbatar da darajar da hanyar da aka bayar ya ɗauki. Tunanen abubuwa sun nuna cewa TIA ta sami transimpedance gain na 58 dB Ω , na BW na 17.4 GHz, na input-referred noise na 17.4 pA/sqrt (Hz), da eye-opening na 20 mV a data-rate na 64 Gbps PAM4 da bit-error-rate (BER) na 1E-6. Zaninka duka na TIA ya fi ɗaukan 19 mW da kuma ya ƙoƙari tashar active area na 0.023 mm 2 .

Source: IEEE Xplore

Statement: Respect the original, good articles worth sharing, if there is infringement please contact delete.

Ba da kyau kuma kara mai rubutu!
Tambayar Da Yawanci
Makarantar Mai Yawanci
Aika tambaya
Kwamfuta
Samun IEE Business Application
Yi amfani da IEE-Business app don samun abubuwan aikin, samun halayyin, haɗi da malamai, kuma kai tsauraran takaiddun kasoshin duka lokaci, duka wurin—dole bai karfin takamaltar hulɗin ku na alintakargida da kasuwanci.