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Tunnel Diode

Tunnel diode (ko kiran da Esaki diode) shine wata maimaita diode da na iya cewa tana da “yaduwar zafi” saboda matsalolin quantum mechanical tunanin tunneling. Tunnel diodes suna da pn junction mai yawa da take doka suke shiga tsakanin 10 nm. Dukan da ya yi wa junction ta ya ba da gaba da band gap, inda conduction band electron states a N-side ana hada da valence band hole states a P-side.

Transistors suna da hankali a kan frequency mai yawa saboda transit time da wasu abubuwa masu sauri. Wasu abubuwa suna amfani da siffofin negative conductance na semiconductors don application mai frequency mai yawa. Tunnel diode, ko kira Esaki diode, shine wata abubuwan da ake amfani da su da negative conductance da ake kira bayan L. Esaki game da shugabanninsa a kan tunneling.

Kashi da dukan a p da n region shine mai yawa, kimanin 1024 – 1025 m-3. PN junction na biyo ne mai yawan abrupt. Saboda haka, width of depletion layer shine mai yawa. A current voltage characteristics na tunnel diode, za a iya samun yadda ake fuskantar slope mai negative idan an yi forward bias.

Sun kira shi “tunnel diode” saboda quantum mechanical tunneling shine wanda ya haifar da alamar da ke faru a nan. Dukan da ya yi wa shi shine mai yawa saboda a absolute zero temperature Fermi levels ana yawan bias na semiconductors.

Siffonin Tunnel Diode

Idan an yi reverse bias, Fermi level na p-side za a zama mai yawa da n-side, wanda ya haifar da electrons suka tunnel daga valence band na p-side zuwa conduction band na n-side. Idan reverse bias ya zama mai yawa, tunnel current tana zama mai yawa.

Idan an yi forward bias, Fermi level na n-side za a zama mai yawa da p-side, saboda haka tunneling of electrons daga n-side zuwa p-side ta faru. Kashi da tunnel current shine mai yawa da normal junction current. Idan an yi forward bias mai yawa, tunnel current tana zama mai yawa har zuwa limit batun.

Idan band edge na n-side ana hada da Fermi level a p-side, tunnel current tana zama mai yawa da kuma idan an yi forward bias mai yawa, tunnel current tana zama mai kadan kuma muna samu yadda ake fuskantar negative conduction region. Idan an yi forward bias mai yawa, normal pn junction current tana faru wanda ya shafi exponentially proportional to the applied voltage. V-I characteristics na tunnel diode tana ba,

Negative resistance tana amfani a kan oscillation da Ck+ function tana da very high frequency frequencies.

Alamomin Tunnel Diode

Amfani da Tunnel Diode

• Oscillator Circuits

• Used in Microwave Circuits

• Resistant to Nuclear Radiation