Mai shi ne PIN Photodiode?
Mai suna PIN Photodiode?
PIN Diode
PIN photodiode ita ce wani abu mai gano hukuma, yana iya zama alamomin siyasa zuwa alamomin karami.Wannan teknologi an samun shi a tarihin farko na 1950. Diode ta da sauran masu yawan uku.
Sun hada da p-region, intrinsic region, da n-region. P-region da n-region suka fi tsarki da karfin kirkiro saboda haka cewa suka fi tsarki da karfi a diodin p-n na bace. Kuma intrinsic region yana da tsawon da ya fi tsawon space charge region na pn junction na bace.
PIN photo diode yana aiki da amfani da reverse bias voltage da kuma idan reverse bias an amfani shi, space charge region yana bukata intrinsic region daidai. Electron hole pairs sun haifi shi a space charge region ta hanyar photon absorption. Switching speed na frequency response na photodiode yana da muhimmanci da carrier lifetime.
Switching speed zai iya canzawa da minority carrier lifetime mai kusa. A cikin abubuwan photodetector inda response speed yana da muhimmanci, depletion region yana da kyau a zama tsawonta don kusan minority carrier lifetime, kuma haka zai iya canza switching speed. Wannan zai iya samun shi a matsayin PIN photodiode saboda intrinsic region yana da kyau tsawon space charge width.
Avalanche photo diode (ba za a yi tasiri game da avalanche diode) ita ce wani abu mai gano hukuma, yana iya zama alamomin siyasa zuwa alamomin karami, babbar lamurin a cikin wannan research work an samun shi a shekarun 1960s.Structural configuration na avalanche photodiode yana da haske da PIN photodiode. PIN photodiode ta da sauran masu yawan uku-
P-region,
Intrinsic region,
N-region.
Koyar yana cewa reverse bias an amfani shi da yawan kusa don bayar impact ionization. Idan silicon ce sc material, diode zai bukatar 100 zuwa 200 volts. Da kuma electron-hole pairs sun haifi shi ta hanyar photon absorption a depletion region. Wadannan additional electron-hole pairs sun haifi shi ta hanyar impact ionization kuma suna kusa ci gaba daga depletion region, kuma haka zai iya ba da transit times mai kusa.
