Bokar fassara Zener da kuma bokar fassara avalanche suna biyu na farko wajen semiconductors, musamman diodes. Fassarar voltaji wanda yake faru daga wannan biyu na farko suna bambanta, domin hakan da alamar sabbin gida da tushen da suka faru.
Bokar fassara Zener
Bokar fassara Zener yake faru a cikin PN junction da yake kawo shiga, kuma idan voltaji da aka bayar ya fi yawa, zai iya ba electrons da ke cikin valence band karfi zuwa conduction band don samun electron-hole pairs. Wannan nasara yana faru a cikin layon da aka fitowa da semiconductor materials, musamman a PN junctions da take da high doping concentrations.
Abubuwan da ke ciki
Tushen da yake faru: A PN junction da take da high doping concentration, karfin electric field ya fi yawa, wanda yake ba electronic transition ya faru.
Fassarar voltaji: Yana faru a inganci da voltaji masu yawan, bayan 2.5V zuwa 5.6V.
Temperature coefficient: Negative temperature coefficient, yana nufin cewa idan tafakki ta zama, fassarar voltaji zai zama.
Bokar fassara avalanche
Bokar fassara avalanche yana faru a cikin PN junction da yake kawo shiga, amma shine ne process ta ionization da yake faru a cikin collision. Idan voltaji da aka bayar ya zama da yawan, karfin electric field yana bukatar free electrons zuwa kinetic energy mai yawa don tabbatar da atoms a cikin lattice, don samun electron-hole pairs. Wadannan electron-hole pairs masu nauyauka suna ci gaba da collision, don haka an yi chain reaction wanda yake bukatar increase current.
Abubuwan da ke ciki
Tushen da yake faru: A PN junction da take da low doping concentration, karfin electric field ya fi yawan, kuma yana bukatar voltaji masu yawan don trigger avalanche effect.
Fassarar voltaji: Yana faru a voltaji masu yawan, bayan 5V, depending on the material and doping concentration.
Temperature coefficient: Positive temperature coefficient, yana nufin cewa idan tafakki ta zama, fassarar voltaji zai zama.
Sabbin abubuwan da fassarar voltaji Zener yana da yawan da fassarar voltaji avalanche shine:
Doping concentration: Bokar fassara Zener yana faru a PN junction da take da high doping concentrations, amma bokar fassara avalanche yana faru a PN junction da take da low doping concentrations. High doping concentration yana nufin cewa ana iya samun karfin electric field da ya fi yawa a voltaji masu yawan, don haka electrons a cikin valence band za su sami energy mai yawa zuwa conduction band. Amma, PN junctions da take da low doping concentrations sun bukatar voltaji masu yawan don samun karfin electric field da ya fi yawa.
Karfin electric field: Bokar fassara Zener yana neman transitions electrons da yake faru a karfin electric field da ya fi yawa, amma bokar fassara avalanche yana neman karfin electric fields da yake cikin jagorar kasa ta PN junction. Saboda haka, bokar fassara avalanche yana bukatar voltaji masu yawan don samun impact ionization effect.
Abubuwan da ke ciki na material: Bokar fassara Zener yana faru a materials (such as silicon) da yake da energy gap. Bokar fassara avalanche yana neman abubuwan da ke ciki na material, such as band gap width and carrier mobility.
Mukalma
Bokar fassara Zener da bokar fassara avalanche suna biyu na farko wajen semiconductors, wanda suka faru a tushen da suke bambanta da suke da temperature coefficients. Fassarar voltaji Zener yana da yawan da fassarar voltaji avalanche, saboda bokar fassara Zener yana faru a PN junction da take da high doping concentration, amma bokar fassara avalanche yana faru a PN junction da take da low doping concentration, maimakon hakan yana bukatar voltaji masu yawan don samun impact ionization effect.