Yadda Yake Transistor Ya Shiga Wani?

Yadda Yaɗa Transistor Yana Iya?

Takardun Transistor

Transistor yana nufin kayayyakin saman kimiyya da ake amfani da ita don zama ko ci gida alamomin shiga.

Akawo uku na transistor daban-daban da ke cikin wannan, amma za a yi tabbacin transistor NPN a hanyar common emitter. Wannan nau'in yana da kofin masu sauran da kuma takaice mai kyau, wanda ake da muhimman mafi girman electrons (majority carriers).

Kofin collector yana da takaice mai kyau da kuma kofin masu sauran, saboda haka yana da mafi girman electrons kadan da kofin emitter. Kofin base yana da takaice mai tsirriwa da kuma kofin masu sauran mai yawa, tare da mafi girman holes (majority carriers) kadan. Don haka, za a binda battery ta bayan emitter da collector. Kofin emitter ya binta da kofin negative ta battery. Saboda haka, junction emitter-base yana banta forward biased, da kuma junction base-collector yana banta reverse biased. A cikin wannan yanayi, ba za a haɗa siɗe a cikin device. Idan muna son tabbacin tushen da operation ta device, muna iya karɓar da tushen da kofin masu sauran transistor NPN. A cikin wannan, kofin emitter yana da takaice mai kyau da kuma kofin masu sauran mai tsirriwa. Saboda haka, mafi girman majority carriers (free electrons) a wannan kofin transistor yana da tsirriwa.

Duk da cewa kofin base yana da takaice mai tsirriwa, yana cikin micrometers, amma kofin emitter da collector suna cikin millimeters. Dabba p-type na kofin masu sauran yana da kofin masu sauran mai yawa, saboda haka, yana da mafi girman holes kadan a wannan kofin. Kofin collector yana da takaice mai kyau, da kuma kofin masu sauran mai tsirriwa, saboda haka, yana da mafi girman free electrons a wannan kofin.

Voltage da ake binda bayan emitter da collector yana ƙara a biyu. Kafin, junction emitter-base yana da barrier potential mai tsirriwa kamar 0.7 volts a transistor silicon. Baki ɗaya na voltage yana ƙara a junction base-collector a cikin barrier mai kyau.

Idan voltage across device yana da ma'ana, barrier potential mai tsirriwa a junction emitter-base yana daɗi 0.7 volts, da baki ɗaya na source voltage yana ƙara a junction base-collector a cikin barrier mai kyau.

Wannan na nufin cewa voltage na collector ba zan iya tabbatar da barrier potential mai tsirriwa. Saboda haka, free electrons a kofin emitter ba su zan iya ƙarin zuwa kofin base. Saboda haka, transistor yana ƙara kamar switch mai kyau.

NB: – A cikin wannan yanayi, idan transistor ba zan haɗa siɗe current, ba za a ƙara voltage drop a external resistance, saboda haka, duk voltage source (V) zai ƙara a junctions kamar yadda ake fito a figure.

Idan muna binda voltage mai tsirriwa a kofin base ta device, junction base-emitter zai ƙara voltage forward individually, da kuma zai iya tabbatar da barrier potential mai tsirriwa, saboda haka, majority carriers, wanda suka fi electrons a kofin emitter, zai ƙarin zuwa kofin base inda suka ƙara mafi girman holes don recombine.

Amma saboda electric field a junction, free electrons da suka ƙarin zuwa kofin base suka samu kinetic energy. Kofin base yana da takaice mai tsirriwa, saboda haka, free electrons da suka ƙarin zuwa kofin base ba su zan iya recombine da holes a kofin base, saboda haka, suka ƙarin zuwa depletion region mai kyau, kuma suka ƙarin zuwa kofin collector. Saboda a cikin junction base-collector yana da barrier mai kyau, ba zan iya rarrabe flow of free electrons from base to collector, saboda free electrons a kofin base su ne minority carriers.

A cikin haka, electrons sun ƙara zuwa kofin collector, saboda haka, current collector to emitter yana faru. Saboda a cikin kofin base yana da mafi girman holes, electrons da suka ƙarin zuwa kofin base suka recombine da holes da suka ƙara base current. Base current yana da tsirriwa kamar current collector to emitter.

Electrons da suka ƙarin zuwa kofin base suka ƙara base current, amma mafi yawan suka ƙarin zuwa kofin collector. Emitter current yana da tsirriwa kamar base da collector currents. Saboda haka, emitter current yana da tsirriwa kamar base da collector currents.

Idan muna zama voltage na base, saboda increased forward voltage across emitter-base junction, proportionately more free electrons zai ƙarin zuwa kofin base da kinetic energy mai kyau. Wannan zai ƙara proportionate increase of collector current. A cikin haka, by controlling a small base signal, muna iya control quite a large collector signal. Wannan shine basic working principle of a transistor.