Free Expert Guides on Power Systems, Circuit Design & Electrical Troubleshooting

What are the Characteristics of Diode?Diode DefinitionWe use semiconductor materials (Si, Ge) to form variety of electronic devices. The most basic device is diode. Diode is a two terminal PN junction device. PN junction is formed by bringing a P type material in contact with N type material. When a P-type material is brought in contact with N- type material electrons and holes start recombining near the junction. This results in lack of charge carriers at the junction and thus the junction is c

What is an PN Junction Diode?PN Junction Diode A PN junction diode is a basic component in electronics. In this type of diode, one side of a semiconductor is doped with acceptor impurities (P-type) and the other side with donor impurities (N-type). This diode can be classified as either a ‘step graded’ or ‘linearly graded’ junction.In a step graded PN junction diode, the dopant concentration is uniform on both sides up to the junction. In a linearly graded junction, the doping concentration chan

What is a Tunnel Diode?Tunnel DiodeA tunnel diode (also known as a Esaki diode) is a type of semiconductor diode that has effectively “negative resistance” due to the quantum mechanical effect called tunneling. Tunnel diodes have a heavily doped pn junction that is about 10 nm wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or less aligned with valence band hole states on the P-side.Transistors struggle with very high frequencies

What is a PIN Photodiode?PIN DiodePIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was developed in the late 1950s. The diode consists of three distinct regions.It includes a p-region, an intrinsic region, and an n-region. The p-region and n-region are more heavily doped compared to those in standard p-n diodes. Additionally, the intrinsic region is wider than the space charge region of a normal pn junction.The PIN photo diode ope

LASERThe acronym LASER stands for Light amplification by stimulated emission of radiation. A laser is a device that produces a unique type of light not found naturally. This light is generated through optical amplification, which relies on the stimulated emission of electromagnetic radiation. It is different from conventional light in three ways. First, the lights from LASER contains only one color or wavelength that is why it is called ‘monochromatic’. Secondly, all the wavelengths are in phase

Reverse Recovery Time DefinitionReverse recovery time is defined as the period during which a diode continues to conduct in reverse after the bias is switched from forward to reverse.Understanding Reverse CurrentDuring the reverse recovery time, a large reverse current flows through the diode, which eventually decreases to a stable reverse saturation current.Softness Factor ExplainedThe softness factor, a crucial metric in diode performance, compares the time the current takes to reach its peak

What are Power Diodes?Power Diode A power diode is defined as a diode used in power electronics circuits, capable of handling higher currents than regular diodes. It has two terminals and conducts current in one direction, with a construction designed for higher power applications.To understand power diodes better, let’s revisit how a standard diode works. A diode is defined as the simplest semiconductor device, with two layers, two terminals, and one junction.Ordinary signal diodes have a junct

What is a Varactor Diode?Varactor Diode A varactor diode is defined as a reverse-biased p-n junction diode whose capacitance can be varied electrically. These diodes are also known as varicaps, tuning diodes, voltage variable capacitor diodes, parametric diodes, and variable capacitor diodes.The operation of the p-n junction depends on the type of bias applied, either forward or reverse. In forward bias, the width of the depletion region decreases as the voltage increases.On the other hand, the

What is a Gunn Diode?Gunn Diode DefinitionA Gunn diode is a passive semiconductor device with two terminals, which composes of only an n-doped semiconductor material, unlike other diodes which consist of a p-n junction. Gunn diodes can be made from the materials which consist of multiple, initially-empty, closely-spaced energy valleys in their conduction band like Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Nitride (GaN), Cadmium Telluride (CdTe), Cadmium Sulfide (CdS), Indium Arsen

Avalanche Diode DefinitionAn avalanche diode is a type of semiconductor diode which is designed to experience avalanche breakdown at a specified reverse bias voltage. The pn junction of an avalanche diode is designed to prevent current concentration and resulting hot spots so that the diode is undamaged by the avalanche breakdown.The avalanche breakdown that occurs is due to minority carriers accelerated enough to create ionization in the crystal lattice, producing more carriers which in turn cr