Transistor na Biyan Pola

Ma'ana BJT

Bipolar Junction Transistor (ko da ake kira BJT ko BJT Transistor) shine wurin ƙarfin jama'i na ƙarfin semiconductors da shi ne da tsari biyu. Wannan ƙarfin yana iya haɗa ko zama sinal. Shi ne ƙarfin da take ƙara da tasiri mai ƙarfi. Tsarin BJT sun hada da base, collector da emitter. BJT shine ƙarfin transistor da take amfani da electrons da holes don ƙarfin.

Idan sinal da ma'ana mai tsawo ta gudana a base, za a iya samun shi a cikin formi mai zama a collector. Wannan shine zamar da ke bayarwa BJT. Amsa, yana bukatar ƙarfin mai ƙarfi na DC wajen gudanar da tashin zama.

Akwai abu ɗaya daga cikin bipolar junction transistors – NPN transistors da PNP transistors. Taurari na wannan abubuwa biyu na bipolar junction transistors ya bayyana a nan.

Daga taurari, ana iya tabbacin cewa har zuwa BJT yana da uku tsari sunan emitter, base da collector. JE da JC sun nuna ƙungiyar emitter da ƙungiyar collector saboda haka. Idan ba a yi ƙarin bayani, yana da kyau a fahimtar cewa ƙungiyar emitter-base yana ƙara da tasiri mai ƙarfi da ƙungiyar collector-base yana ƙara da tasiri mai tsawo. Abubuwan da za suka yanayi za su bayyana abubuwa biyu na transistor.

NPN Bipolar Junction Transistor

A n-p-n bipolar transistor (ko npn transistor) p-type semiconductor ta daɗe a kan n-type semiconductors biyu. A nan an bayyana diagram na n-p-n transistor. IE da IC sun nuna ƙarfin emitter da ƙarfin collector saboda haka, VEB da VCB sun nuna voltage na emitter-base da voltage na collector-base. Idan ƙarfin emitter, base da collector IE, IB da IC ta gudana a cikin transistor, alamomin ƙarfi yana da alama mai ƙarfi, idan ƙarfin ta fito daga transistor, alamomin ƙarfi yana da alama mai tsawo. Zan iya tabbataccen ƙarfin da voltages a cikin n-p-n transistor.

PNP Bipolar Junction Transistor

Wanda mutane da p-n-p bipolar junction transistor (ko pnp transistor), n-type semiconductor ta daɗe a kan p-type semiconductors biyu. Diagram na p-n-p transistor ya bayyana a nan.

Don p-n-p transistors, ƙarfin ta gudana a cikin transistor a kan terminal na emitter. Kamar baya ƙarfin bipolar junction, ƙungiyar emitter-base yana ƙara da tasiri mai ƙarfi da ƙungiyar collector-base yana ƙara da tasiri mai tsawo. Zan iya tabbataccen ƙarfin emitter, base da collector, kuma voltage na emitter-base, collector-base da collector-emitter don p-n-p transistors.

Siffar BJT

Taurari ya nuna n-p-n transistor wanda ya ƙara da tasiri mai ƙarfi a kan active region (za a duba transistor biasing), ƙungiyar BE yana ƙara da tasiri mai ƙarfi saboda haka ƙungiyar CB yana ƙara da tasiri mai tsawo. Tsakiyar depletion region na ƙungiyar BE yana da tsaki mai yawa da ƙungiyar CB.

Tasiri mai ƙarfi a ƙungiyar BE yana rage barrier potential, tare da ƙarfi electrons su gudanar da emitter zuwa base. Saboda base yana da tsaki mai yawa da kuma ƙarfi mai yawa, yana da holes mai yawa. Duk da cewa 2% daga electrons daga emitter su ji da holes a base da su gudanar da base terminal.

Wannan shine ƙarfin base, yana ƙara da recombination da electrons da holes (Amsa, ƙarfin conventional current flow yana da ƙarfi mai yawa da flow of electrons). Ƙarfin da ya ƙara da su yana tafar ƙungiyar collector junction mai tsawo. Saboda haka, KCL,

Ƙarfin base yana da tsaki mai yawa da ƙarfin emitter da collector.

A nan, majority charge carriers sun hada da electrons. Operation na p-n-p transistor yana da ƙarfi da n-p-n, farkon yadda ce majority charge carriers sun hada da holes saboda electrons. Babban ƙarfin yana ƙara da majority carriers, amma ƙarfin da ya ƙara da minority charge carriers. Saboda haka, ake kiran su da minority carrier devices.

Equivalent Circuit of BJT

P-n junction yana nufin diode. Saboda transistor yana da p-n junction biyu, yana da ƙarfi da diodes biyu wanda suka haɗa. Wannan shine mahaifi na two diode analogy of the BJT.

Bipolar Junction Transistors Characteristics

Uku tsari na BJT sun hada da collector, emitter da base. Idan ba a sanin cewa bipolar junction transistor characteristics, a muke so kuɗi game da modes of operation wanda ake amfani da shi. Modes sun hada da

• Common Base (CB) mode

• Common Emitter (CE) mode

• Common Collector (CC) mode

Duka uku types na modes an bayyana a nan

Idan ba a sanin cewa characteristics na BJT, akwai ƙarin bayani don ƙarin modes of operation. Characteristics yana nufin graphical forms na relationships among different current and voltage variables na transistor. Characteristics na p-n-p transistors an bayyana don ƙarin modes da ƙarin parameters.

Common Base Characteristics

Input Characteristics

Don p-n-p transistor, input current shine ƙarfin emitter (IE) da input voltage shine voltage na collector base (VCB).

Saboda ƙungiyar emitter-base yana ƙara da tasiri mai ƙarfi, graph na IE Vs VEB yana da ƙarfi da forward characteristics na p-n diode. IE yana ƙara da fixed VEB idan VCB yana ƙara.

Output Characteristics

Output characteristics yana nuna relationship bayan output voltage da output current IC shine output current da collector-base voltage da ƙarfin emitter IE shine input current da take ƙara da parameters. Taurari na nan an bayyana output characteristics don p-n-p transistor a CB mode.

A nan a sanin cewa don p-n-p transistors IE da VEB sun hada da alama mai ƙarfi da IC, IB, VCB sun hada da alama mai tsawo. Akwai uku regions a nan curve, active region, saturation region da cut off region. Active region shine region wanda transistor yake yi waɗannan.

A nan ƙungiyar emitter yana ƙara da tasiri mai tsawo. Saturation region shine region wanda ƙungiyar emitter-collector biyu sun ƙara da tasiri mai ƙarfi. Da kuma cut off region shine region wanda ƙungiyar emitter da collector biyu sun ƙara da tasiri mai tsawo.

Common Emitter Characteristics

Input characteristics

IB (Base Current) shine input current, VBE (Base – Emitter Voltage) shine input voltage don CE (Common Emitter) mode. Saboda haka, input characteristics don CE mode zai ƙara da relationship bayan IB da VBE da VCE as parameter. Characteristics an bayyana a nan

Typical CE input characteristics yana da ƙarfi da forward-biased na p-n diode. Amma idan VCB yana ƙara, width na base yana ƙara.

Output Characteristics

Output characteristics don CE mode shine curve ko graph bayan ƙarfin collector (IC) da voltage na collector-emitter (VCE) idan ƙarfin base IB shine parameter. Characteristics an bayyana a nan a taurari.

Kamar output characteristics na common – base transistor, CE mode akwai uku regions sunan (i) Active region, (ii) cut-off regions, (iii) saturation region. Active region shine region wanda ƙungiyar collector yana ƙara da tasiri mai tsawo da ƙungiyar emitter yana ƙara da tasiri mai ƙarfi.

Don cut-off region, ƙungiyar emitter yana ƙara da tasiri mai tsawo kadan da ƙarfin collector ba ta ƙara da tasiri mai tsawo. Da kuma don saturation region ƙungiyar collector da emitter biyu sun ƙara da tasiri mai ƙarfi.