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What is an IGBT?

Encyclopedia

07/19/2024

What is an IGBT?

IGBT Definition

An Insulated Gate Bipolar Transistor (IGBT) is defined as a semiconductor device that combines the advantages of Power MOSFETs and Power BJTs.

Structure

The IGBT structure includes an additional p+ injection layer, which enhances its performance compared to PMOSFETs.

Switching Characteristics of IGBT

IGBT switching involves distinct turn-on and turn-off times, with specific delay and rise/fall times affecting performance.

IGBT开关特性.jpeg

Latching Up

Latching up occurs when the IGBT stays on even after the gate voltage is reduced, requiring special commutation circuits to turn it off.

Advantages

Lower gate drive requirements
Low switching losses
Small snubber circuitry requirements
High input impedance
Voltage controlled device
Temperature coefficient of ON state resistance is positive and less than PMOSFET, hence less On-state voltage drop and power loss.
Enhanced conduction due to bipolar nature
Better Safe Operating Area

Disadvantages

Cost
Latching-up problem
High turn off time compared to PMOSFET

Topics

Basic knowledge IGBT

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The Electricity Encyclopedia is dedicated to accelerating the dissemination and application of electricity knowledge and adding impetus to the development and innovation of the electricity industry.

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